TC58NYG2S0HBAI6 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

Toshiba

Description

TC58NYG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM .
The TC58NYG2S0HBAI6 is a single 1.

Datasheet Specifications

Applications

* such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-vol

TC58NYG2S0HBAI6 Distributors

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