Datasheet Specifications
- Part number
- TC58NYG0S3EBAI4
- Manufacturer
- Toshiba ↗
- File Size
- 477.07 KB
- Datasheet
- TC58NYG0S3EBAI4-Toshiba.pdf
- Description
- 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
Description
TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM .
Applications
* such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memoTC58NYG0S3EBAI4 Distributors
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