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TC58NYG0S3EBAI4

1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

TC58NYG0S3EBAI4 General Description

The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between th.

TC58NYG0S3EBAI4 Datasheet (477.07 KB)

Preview of TC58NYG0S3EBAI4 PDF

Datasheet Details

Part number:

TC58NYG0S3EBAI4

Manufacturer:

Toshiba ↗

File Size:

477.07 KB

Description:

1 gbit (128m x 8 bit) cmos nand e2prom.

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TAGS

TC58NYG0S3EBAI4 GBIT 128M BIT CMOS NAND E2PROM Toshiba

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