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TC58NYG1S3HBAI6

2 GBIT (256M x 8-BIT) CMOS NAND E2PROM

TC58NYG1S3HBAI6 General Description

The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks. The device has two 2176-byte static registers which allow program and read data to be transferred betwe.

TC58NYG1S3HBAI6 Datasheet (715.75 KB)

Preview of TC58NYG1S3HBAI6 PDF

Datasheet Details

Part number:

TC58NYG1S3HBAI6

Manufacturer:

Toshiba ↗

File Size:

715.75 KB

Description:

2 gbit (256m x 8-bit) cmos nand e2prom.

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TAGS

TC58NYG1S3HBAI6 GBIT 256M 8-BIT CMOS NAND E2PROM Toshiba

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