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TC58NYG1S3HBAI6 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM

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Description

TC58NYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M  8 BIT) CMOS NAND E2PROM .
The TC58NYG1S3HBAI6 is a single 1.

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Applications

* such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density

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