TC58NYG2S0HBAI4

4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

Toshiba

TC58NYG2S0HBAI4 Features

* Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 4352 × 8 4352 bytes (256K + 16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TC58NYG2S0HBAI4 General Description

The TC58NYG2S0HBAI4 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which allow program and read data to be transferred betwe.

TC58NYG2S0HBAI4 Datasheet (478.60 KB)