TC58NYG2S0HBAI4 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

Toshiba

Description

TC58NYG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM .
The TC58NYG2S0HBAI4 is a single 1.

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Datasheet Specifications

Part number: TC58NYG2S0HBAI4
Manufacturer: Toshiba ↗
File Size: 478.60 KB
Datasheet: TC58NYG2S0HBAI4-Toshiba.pdf
Description: 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

Features

* Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 4352 × 8 4352 bytes (256K + 16K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TC58NYG2S0HBAI4 Distributors

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TC58NYG2S0HBAI4 GBIT 512M BIT CMOS NAND E2PROM Toshiba

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