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TC58NYG2S3ETA00

4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

TC58NYG2S3ETA00 Features

* Organization Memory cell array Register Page size Block size x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TC58NYG2S3ETA00 General Description

The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between th.

TC58NYG2S3ETA00 Datasheet (500.42 KB)

Preview of TC58NYG2S3ETA00 PDF

Datasheet Details

Part number:

TC58NYG2S3ETA00

Manufacturer:

Toshiba ↗

File Size:

500.42 KB

Description:

4 gbit (512m x 8 bit) cmos nand e2prom.

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TAGS

TC58NYG2S3ETA00 GBIT 512M BIT CMOS NAND E2PROM Toshiba

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