TC58NYG2S3ETA00 - 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

Toshiba

TC58NYG2S3ETA00 Datasheet Preview — Preview of TC58NYG2S3ETA00 PDF

Datasheet Details

Part number	TC58NYG2S3ETA00
Manufacturer	Toshiba ↗
File Size	500.42 KB
Description	4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
Datasheet	TC58NYG2S3ETA00-Toshiba.pdf

TC58NYG2S3ETA00 Product details

Description

The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.

Features

Organization Memory cell array Register Page size Block size x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 4016 blocks Max 4096 blocks.
Power supply VCC = 1.7V to 1.95V.
Access time Cell array to.

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Published: May 20, 2015 |