TC58NYG2S3ETA00 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

Toshiba

Description

TC58NYG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM .
The TC58NYG2S3E is a single 1.

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Datasheet Specifications

Part number: TC58NYG2S3ETA00
Manufacturer: Toshiba ↗
File Size: 500.42 KB
Datasheet: TC58NYG2S3ETA00-Toshiba.pdf
Description: 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

Features

* Organization Memory cell array Register Page size Block size x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TC58NYG2S3ETA00 Distributors

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TC58NYG2S3ETA00 GBIT 512M BIT CMOS NAND E2PROM Toshiba

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