TC58NYG0S3HBAI4

1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

Toshiba

TC58NYG0S3HBAI4 Features

* Organization Memory cell array Register Page size Block size x8 2176  64K  8 2176  8 2176 bytes (128K  8K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy

* Mode control Serial input/output Command control

* Number of valid blocks Min

TC58NYG0S3HBAI4 General Description

The TC58NYG0S3HBAI4 is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between t.

TC58NYG0S3HBAI4 Datasheet (583.21 KB)