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TC58NYG0S3HBAI4 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

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Description

TC58NYG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M  8 BIT) CMOS NAND E2PROM .
The TC58NYG0S3HBAI4 is a single 1.

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Features

* Organization Memory cell array Register Page size Block size x8 2176  64K  8 2176  8 2176 bytes (128K  8K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
* Mode control Serial input/output Command control
* Number of valid blocks Min

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GBIT 128M BIT CMOS NAND E2PROM Toshiba
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