TC58NYG1S3HBAI4

2 GBIT (256M x 8 BIT) CMOS NAND E2PROM

Toshiba

TC58NYG1S3HBAI4 Features

* Organization Memory cell array Register Page size Block size x8 2176  128K  8 2176  8 2176 bytes (128K  8K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

* Mode cont

TC58NYG1S3HBAI4 General Description

The TC58NYG1S3HBAI4 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks. The device has two 2176-byte static registers which allow program and read data to be transferred betwe.

TC58NYG1S3HBAI4 Datasheet (700.55 KB)