TC58NYG1S3HBAI4 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM

Toshiba

Description

TC58NYG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M  8 BIT) CMOS NAND E2PROM .
The TC58NYG1S3HBAI4 is a single 1.

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Datasheet Specifications

Part number: TC58NYG1S3HBAI4
Manufacturer: Toshiba ↗
File Size: 700.55 KB
Datasheet: TC58NYG1S3HBAI4-Toshiba.pdf
Description: 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM

Features

* Organization Memory cell array Register Page size Block size x8 2176  128K  8 2176  8 2176 bytes (128K  8K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
* Mode cont

TC58NYG1S3HBAI4 Distributors

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TC58NYG1S3HBAI4 GBIT 256M BIT CMOS NAND E2PROM Toshiba

Toshiba TC58NYG1S3HBAI4-like datasheet