TC58NYG0S3EBAI4 - 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

Toshiba

General Description

The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.

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TC58NYG0S3EBAI4 1 gbit (128m x 8 bit) cmos nand e2prom by Toshiba - Datasheet Preview

Datasheet Details

Part number	TC58NYG0S3EBAI4
Manufacturer	Toshiba
File Size	477.07 KB
Description	1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
Datasheet	TC58NYG0S3EBAI4 Datasheet

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TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NYG0S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.