The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MICROWAVE POWER GaN HEMT
TGI8596-50
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 47.0dBm at Pin= 41dBm ŋHIGH GAIN
GL= 9.0dB at Pin= 20dBm ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS add
VDS= 24V IDSset= 1.5A f= 8.5 to 9.6 GHz @Pin= 41dBm
dBm 46.0 47.0
A
5.0
6.0
%
31
Linear Gain Channel Temperature Rise
GL Tch
@Pin= 20dBm
dB
(VDS IDS Pin Pout)
Rth(c-c)
°C
7.0
9.0
130 150
Recommended Gate Resistance(Rg): 13.3
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 5V IDS= 5.
TGI8596-50 Datasheet
