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TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band)
Features • High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications (Ta = 25°C)
Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS x IDS x Rth (c-c) VDS = 9V f = 14.0 - 14.5 GHz A % °C – – – 0.85 23 – 1.1 – 60 Condition Unit dBm dB Min. 32.5 5.5 Typ. 33.5 6.
TIM1414-2 Datasheet
