Datasheet Summary
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TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band)
Features
- High power
- P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz
- High gain
- G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz
- Broadband internally matched
- Hermetically sealed package RF Performance Specifications (Ta = 25°C)
Characteristic Output Power at 1dB pression Point Power Gain at 1dB pression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS x IDS x Rth (c-c) VDS = 9V f = 14.0
- 14.5 GHz A % °C
- -
- 0.85 23
- 1.1
- 60 Condition Unit dBm dB Min. 32.5 5.5 Typ. 33.5 6.5 Max
- -
DataShee
Electrical Characteristics (Ta =...