TK1K9A60F mosfet equivalent, silicon n-channel mosfet.
(1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.4 mA)
3. Packaging .
* Switching Power Supplies
2. Features
(1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON.
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