TTA013 - Silicon PNP Epitaxial Type Bipolar Transistors

Product Overview

Toshiba

Part number	TTA013
Manufacturer	Toshiba
File Size	302.56 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA013 Datasheet
Additional preview pages of the TTA013 datasheet.

(1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ. ) (IC = -0.75 A) 3. Packaging and Internal Circuit PW-Mini 1. Base 2. Collector (Heatsink) 3. Emitter ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-10 2023-01-18 Rev.2.0 TTA013 4. Absolute Maximum Ratings (Note) (Unless otherwise.

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Published: Apr 29, 2024 |