TTA013 Silicon PNP Epitaxial Type Bipolar Transistors
(1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (.
• High-Speed Switching
• DC-DC Converters
2. Features
(1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC.
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