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1SS322 - Silicon Epitaxial Schottky Barrier Type Diode

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS322 Low Voltage High Speed Switching  Low forward voltage  Low reverse current  Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC−70 1SS322 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation P 100 mW Junction temperature Tj 125 °C JEDEC ― Storage temperature Tstg −55 to 125 °C JEITA SC−70 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 1−2P1D Weight: 0.006g (typ.) temperature, etc.
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