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2SC6078
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6078
○ Power Amplifier Applications ○ Power Switching Applications
• • Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) Unit: mm
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Maximum Ratings (Ta = 25°C)
Characteristic Symbol VCBO VCEX VCEO VEBO DC Pulse IC ICP IB PC Tj Tstg Rating 160 160 80 7 3 5 1.0 1.8 150 −55～150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR（HEAT SINK） 3 : EMITTER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
JEDEC JEITA TOSHIBA
－ －
2-10T1A
Weight:1.5g(typ) Note: Using continuously under heavy loads (e.g.
2SC6078 Datasheet
