Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
○ Power Amplifier Applications ○ Power Switching Applications
- - Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) Unit: mm
.. Absolute
Maximum Ratings (Ta = 25°C)
Characteristic Symbol VCBO VCEX VCEO VEBO DC Pulse IC ICP IB PC Tj Tstg Rating 160 160 80 7 3 5 1.0 1.8 150
- 55～150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR（HEAT SINK） 3 : EMITTER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
JEDEC JEITA...