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2SD842 Datasheet - Toshiba Semiconductor

Silicon NPN Transistor

2SD842 Features

* . High Collector Current : = 30A . High DC Current Gain : hFE =1000(Min.),(vCE =5V, I C =20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector

2SD842 Datasheet (109.56 KB)

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Datasheet Details

Part number:

2SD842

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

109.56 KB

Description:

Silicon npn transistor.

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2SD842 Silicon NPN Transistor Toshiba Semiconductor

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