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2SK3017 - Silicon N Channel MOS Type Field Effect Transistor

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2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK3017 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.05 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0~4.
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