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2SK3562, N-Channel MOSFET - Toshiba Semiconductor

2SK3562_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3562

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

201.30 KB

Description:

N-channel mosfet.

2SK3562 Description

2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications * Low drain-source ON-resistance: RDS (ON) = 0.9 â„Ķ (typ.) * High forward transfer admittance: |Yfs| = 5.0 S (typ.) * Low leakage current: IDSS = 100 ΞA (max) (VDS = 600 V) * Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drai

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2SK3562 N-Channel MOSFET Toshiba Semiconductor

Stock and price

Distributor
Toshiba America Electronic Components
2SK3562(Q)
1 In Stock
Qty : 1 units
Unit Price : $71.94