* (1) (2) (3) (4) 6.5th generation The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. Enhancement mode High-speed switching IGBT : tf = 0.18 µs (typ.) (IC = 50 A) FWD : trr = 0.45 µs (typ.) (IF = 15 A) (5) (6) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC =
GT50MR21 Datasheet (213.98 KB)
GT50MR21
Toshiba ↗ Semiconductor
213.98 KB
Silicon n-channel igbt.
GT50MR21 Discrete IGBTs Silicon N-Channel IGBT GT50MR21 1. Applications Dedicated to Voltage-Resonant Inverter Switching Applications The p.
📁 Related Datasheet
GT50G102 Insulated Gate Bipolar Transistor (ETC)
GT50G321 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J101 TRANSISTOR IGBT (Toshiba)
GT50J102 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J121 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J122 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J123 Silicon N-Channel IGBT (Toshiba)
GT50J301 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J322 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J325 Silicon N-Channel IGBT (Toshiba Semiconductor)
