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SSM3K01T Datasheet - Toshiba Semiconductor

SSM3K01T Silicon N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T SSM3K01T High Speed Switching Applications Unit: mm Small Package Low on Resistance: Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6 to 1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±10 V Drain current DC Pulse .

SSM3K01T_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3K01T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

212.25 KB

Description:

Silicon n-channel mosfet.

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