TC55NEM216AFTN55 Datasheet | Toshiba

TC55NEM216AFTN55,70 .. TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1 µA standby current (typ) when chip enable ( CE ) is asserted high. There are two control inputs. CE is...