Description
The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.
Features
- Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of.
- 40° to 85°C Standby Current (maximum): 20 µA.
- Access Times (maximum):
TC55NEM216AFTN 55 Access Time
CE Access Time OE Access Time
70 70 ns 70 ns 35 ns
55.
TC55NEM216AFTN55_ToshibaSemiconductor.pdf