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TC55NEM216ASTV77 Datasheet, Toshiba Semiconductor

TC55NEM216ASTV77 Datasheet, Toshiba Semiconductor

TC55NEM216ASTV77

datasheet Download (Size : 159.27KB)

TC55NEM216ASTV77 Datasheet

TC55NEM216ASTV77 cmos

(tc55nem216astv55 / tc55nem216astv77) mos digital integrated circuit silicon gate cmos.

TC55NEM216ASTV77

datasheet Download (Size : 159.27KB)

TC55NEM216ASTV77 Datasheet

TC55NEM216ASTV77 Features and benefits


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* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 2.7 to 5.5 V Power down features using CE D.

TC55NEM216ASTV77 Application

where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range .

TC55NEM216ASTV77 Description

The TC55NEM216ASTV is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to 5.5 V power supply. Advanced ci.

Image gallery

TC55NEM216ASTV77 Page 1 TC55NEM216ASTV77 Page 2 TC55NEM216ASTV77 Page 3

TAGS

TC55NEM216ASTV77
TC55NEM216ASTV55
TC55NEM216ASTV77
MOS
DIGITAL
INTEGRATED
CIRCUIT
SILICON
GATE
CMOS
Toshiba Semiconductor

Manufacturer


Toshiba (https://www.toshiba.com/) Semiconductor

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