This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | TC55NEM216ASTV77 |
|---|---|
| Datasheet | TC55NEM216ASTV77 TC55NEM216ASTV55 Datasheet (PDF) |
| File Size | 159.27 KB |
| Manufacturer | Toshiba |
| Description | (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
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The TC55NEM216ASTV is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to 5.5 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns.
| Part Number | Description |
|---|---|
| TC55NEM216ASTV55 | (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55NEM216AFTN55 | (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55NEM216AFTN70 | (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55NEM208AFPN | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55NEM208AFPV | STATIC RAM |
| TC55NEM208AFTN | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55NEM208AFTV | STATIC RAM |
| TC551001BFL-70L | SILICON GATE CMOS STATIC RAM |
| TC551001BFL-85L | SILICON GATE CMOS STATIC RAM |
| TC551001BFTL-70L | SILICON GATE CMOS STATIC RAM |
