Datasheet4U Logo Datasheet4U.com
Toshiba logo

TC55NEM208AFTN

TC55NEM208AFTN is TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS manufactured by Toshiba.
TC55NEM208AFTN datasheet preview

TC55NEM208AFTN Datasheet

Part number TC55NEM208AFTN
Datasheet TC55NEM208AFTN / TC55NEM208AFPN Datasheet PDF (Download)
File Size 134.83 KB
Manufacturer Toshiba
Description TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFTN page 2 TC55NEM208AFTN page 3

TC55NEM208AFTN Overview

The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns.

TC55NEM208AFTN Key Features

  • Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using
  • Access Times (maximum)
  • Package: SOP32-P-525-1.27 (AFPN) (Weight: TSOP II32-P-400-1.27 (AFTN) (Weight
  • = don't care H = logic high L = logic low
  • R/W H L H
  • I/O1~I/O8 Output Input High-Z High-Z
  • MAXIMUM RATINGS

Related Datasheets

Part Number Description Manufacturer
TC55NEM208AFTV STATIC RAM Toshiba Semiconductor
TC55NEM208AFPN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor
TC55NEM208AFPV STATIC RAM Toshiba Semiconductor

TC55NEM208AFTN Distributor

More datasheets by Toshiba

See all Toshiba parts

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts