• Part: TC55NEM208AFTN
  • Description: TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
  • Manufacturer: Toshiba
  • Size: 134.83 KB
TC55NEM208AFTN Datasheet (PDF) Download
Toshiba
TC55NEM208AFTN

Overview

  • Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE . Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of -40° to 85°C Standby Current (maximum):20 µA
  • Access Times (maximum):