Datasheet Details
| Part number | TC55NEM216ASTV55 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 159.27 KB |
| Description | (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
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The TC55NEM216ASTV is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to 5.5 V power supply.
| Part number | TC55NEM216ASTV55 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 159.27 KB |
| Description | (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
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| Part Number | Description | Manufacturer |
|---|---|---|
| TC5501 | 256 Word x 4-Bit CMOS RAM | Toshiba |
| TC5501D | 256 Word x 4-Bit CMOS RAM | Toshiba |
| TC5501D-1 | 256 Word x 4-Bit CMOS RAM | Toshiba |
| TC5501P | 256 Word x 4-Bit CMOS RAM | Toshiba |
| TC5501P-1 | 256 Word x 4-Bit CMOS RAM | Toshiba |
| Part Number | Description |
|---|---|
| TC55NEM216ASTV77 | (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55NEM216AFTN55 | (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55NEM216AFTN70 | (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55NEM208AFPN | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55NEM208AFPV | STATIC RAM |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.