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AGR19045EF Datasheet Transistor

Manufacturer: TriQuint Semiconductor

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Datasheet Details

Part number AGR19045EF
Manufacturer TriQuint Semiconductor
File Size 372.35 KB
Description Transistor
Datasheet download datasheet AGR19045EF Datasheet

Overview

AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.

Key Features

  • Typical performance over entire GSM band:.
  • P1dB: 50 W typical.
  • Power gain @ P1dB = 14.0 dB continuous wave (CW).
  • Efficiency @ P1dB = 54% typical CW.
  • Return loss:.
  • 10 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Figure 1. AGR19045EF (flanged) Package Typical two carrier N-CDMA performance: VDD = 28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, I.

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