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AGR19045EF - Transistor

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TriQuint Semiconductor

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AGR19045EF Transistor by TriQuint Semiconductor - Datasheet Preview — Datasheet preview – AGR19045EF

Datasheet Details

Part number	AGR19045EF
Manufacturer	TriQuint Semiconductor
File Size	372.35 KB
Description	Transistor
Datasheet	AGR19045EF Datasheet
Additional preview pages of the AGR19045EF datasheet.

Product details

Features

Typical performance over entire GSM band:.
P1dB: 50 W typical.
Power gain @ P1dB = 14.0 dB continuous wave (CW).
Efficiency @ P1dB = 54% typical CW.
Return loss:.
10 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Figure 1. AGR19045EF (flanged) Package Typical two carrier N-CDMA performance: VDD = 28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, I.

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Published: Oct 5, 2009 |