AGR19060E Datasheet Transistor

Manufacturer: TriQuint Semiconductor

AGR19060E transistor by TriQuint Semiconductor - Datasheet Preview

Datasheet Details

Part number	AGR19060E
Manufacturer	TriQuint Semiconductor
File Size	423.37 KB
Description	Transistor
Download	AGR19060E Download (PDF)

Overview

AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.

Key Features

Typical performance over entire GSM band:.
P1dB: 60 W typical.
Continuous wave (CW) power gain: @ P1dB = 14.5 dB.
CW efficiency @ P1dB = 53% typical.
Return loss:.
12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. AGR19060EU (unflanged) AGR19060EF (flanged) Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can.

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