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AGR19060E - Transistor

Product Overview

TriQuint Semiconductor

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AGR19060E Transistor by TriQuint Semiconductor - Datasheet Preview — Datasheet preview – AGR19060E

Datasheet Details

Part number	AGR19060E
Manufacturer	TriQuint Semiconductor
File Size	423.37 KB
Description	Transistor
Datasheet	AGR19060E Datasheet
Additional preview pages of the AGR19060E datasheet.

Product details

Features

Typical performance over entire GSM band:.
P1dB: 60 W typical.
Continuous wave (CW) power gain: @ P1dB = 14.5 dB.
CW efficiency @ P1dB = 53% typical.
Return loss:.
12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. AGR19060EU (unflanged) AGR19060EF (flanged) Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can.

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Published: Oct 5, 2009 |