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AGR19090E - Transistor

Product Overview

TriQuint Semiconductor

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AGR19090E Transistor by TriQuint Semiconductor - Datasheet Preview — Datasheet preview – AGR19090E

Datasheet Details

Part number	AGR19090E
Manufacturer	TriQuint Semiconductor
File Size	403.23 KB
Description	Transistor
Datasheet	AGR19090E Datasheet
Additional preview pages of the AGR19090E datasheet.

Product details

Features

Typical performance over entire GSM band:.
P1dB: 90 W typical.
Continuous wave (CW) power gain: @ P1dB = 14.0 dB.
CW Efficiency @ P1dB = 50% typical.
Return loss:.
12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. AGR19090EU (unflanged) AGR19090EF (flanged) Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can.

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Published: Oct 5, 2009 |