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TriQuint Semiconductor
TriQuint Semiconductor

AGR19180EF Datasheet Preview

AGR19180EF Datasheet

Transistor

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AGR19180EF pdf
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19180EF is a 180 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz—
1990 MHz), code division multiple access (CDMA),
global system for mobile communication
(GSM/EDGE), time division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
Device Performance Features
High-reliability, gold-metalization process.
Hot carrier injection (HCI) induced bias drift of <5%
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1960 MHz, 180 W output
power pulsed 4 µs at 10% duty.
Large signal impedance parameters available.
375D–03, STYLE 1
Figure 1. AGR19180EF (flanged) Package
CDMA Features
www.DataSheet4U.com
Typical two carrier CDMA performance:
VDD = 28 V, IDQ = 1600 mA, POUT = 38 W,
f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95/97
CDMA pilot, sync, paging, traffic codes 8—13
(9 channels) 1.2288 MHz channel bandwidth (BW),
adjacent channel power ration (ACPR) measured
over a 30 kHz BW at f1 – 885 kHz, f2 + 885 kHz.
Distortion products measured over 1.2288 MHz
channel BW at f1 – 2.5 MHz, f2 + 2.5 MHz.
Peak/avg = 9.72 dB @ 0.01% probability on
CCDF:
— Output power: 38 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –33 dBc.
— ACPR: –48.5 dBc
— Return loss: –12 dB.
ESD Rating*
AGR19180EF
HBM
MM
CDM
Minimum (V)
500
50
1000
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvaoinddelinxpgo, sausrseemtobElyS, Danadntdesetleocpterircaatlioonvse.rPAstEgreeAsrKes (DEeOvSic)es
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from electro-
static charge. Reasonable precautions in handling and
packaging MOS devices should be observed.



TriQuint Semiconductor
TriQuint Semiconductor

AGR19180EF Datasheet Preview

AGR19180EF Datasheet

Transistor

No Preview Available !

AGR19180EF pdf
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Table 1. Thermal Characteristics
Parameter
Thermal Resistance, Junction to Case
Symbol
RθJC
Value
0.35
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at TC = 25 °C
Derate Above 25 °C
Operating Junction Temperature
Storage Temperature Range
Symbol
VDSS
VGS
PD
TJ
TSTG
Value
65
–0.5, 15
500
3
200
–65, 150
Unit
Vdc
Vdc
W
W/°C
°C
°C
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 3. dc Characteristics
Parameter
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 430000 µA)
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1 A)
Gate Threshold Voltage (VDS = 10 V, ID = 600 µA)
Gate Quiescent Voltage (VDS = 28 V, ID = 2 x 800 mA)
www.DataSDheraeti4nU-s.cooumrce On-voltage (VGS = 10 V, ID = 1 A)
Symbol
V(BR)DSS
IGSS
IDSS
GFS
VGS(TH)
VGS(Q)
VDS(ON)
Min Typ Max
65 — —
—— 6
— — 21080
— 12 —
— — 3.0
— 3.8 —
— 0.08 —
Unit
Vdc
µAdc
µAdc
S
Vdc
Vdc
Vdc


Part Number AGR19180EF
Description Transistor
Maker TriQuint Semiconductor
Total Page 9 Pages
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