Datasheet Details
| Part number | T1G6001032-SM |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 1.09 MB |
| Description | GaN RF Power Transistor |
| Download | T1G6001032-SM Download (PDF) |
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| Part number | T1G6001032-SM |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 1.09 MB |
| Description | GaN RF Power Transistor |
| Download | T1G6001032-SM Download (PDF) |
|
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The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz.
The device is constructed with TriQuint’s proven TQGaN25 process, which
T1G6001032-SM 10W, 32V, DC – 6 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers •.
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