T1G6001032-SM transistor equivalent, gan rf power transistor.
* Frequency: DC to 6 GHz
* Output Power (P3dB): 10 W Peak at 3.1 GHz
* Linear Gain: >17 dB at 3.1 GHz
* Operating Voltage: 32 V
* Low thermal resistan.
* Military radar
* Civilian radar
* Professional and military radio communications
* Test instrumentatio.
The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at.
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