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PH1113-100 Datasheet Preview

PH1113-100 Datasheet

Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty

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Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty
PH1P1H11311-31-10000
Radar Pulsed Power Transistor - 100 Watts,
1.1-1.3 GHz, 3µs Pulse, 30% Duty
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Description
M/A-COM’s PH1113-100 is a silicon bipolar NPN power tran-
sistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1113-100 can produce 25 watts of output
power with short pulse length (3µS) at 30 percent duty cycle.
The transistor is housed in a 2-lead rectangular metal-ceramic
flange package, with internal input and output impedance match-
ing networks. Diffused emitter ballast resistors and gold metal-
ization assure ruggedness and long-term reliability.
Absolute Maximum Rating at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +25°C
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
PTOT
Tstg
Tj
Rating
70
3.0
9.0
350
-65 to +200
200
Units
V
V
A
W
°C
°C
Outline Drawing1
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Broadband Test Fixture Impedance
F (GHz)
1.1
Z IF ()
5.8 - j3.4
Z OF ()
3.0 - j1.7
1.2
5.6 - j1.8
3.0 - j1.5
1.3
5.9 - j0.4
2.8 - j1.3
TEST FIXTURE
INPUT
CIRCUIT
50ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF 50
Electrical Specifications at 25°C
Symbol
BVCES
ICES
RTH(JC)
PIN
GP
η
RL
VSWR-T
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Thermal Resistance
Input Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Test Conditions
IC = 5 mA
VCE = 32 V
VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz
VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz
VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz
VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz
VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz
VCC = 32V, PO = 100 W, f = 1100, 1200, 1300 MHz
Min Max Units
70 - V
- 10.0 mA
- 0.5 °C/W
- 16 W
8.0 - dB
52 - %
9 - dB
- 3:1 -
V2.00
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.




Tyco Electronics

PH1113-100 Datasheet Preview

PH1113-100 Datasheet

Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty

No Preview Available !

Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty
Test Fixture Electrical Schematic
Top View
PH1113-100
Circuit Dimensions
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00


Part Number PH1113-100
Description Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty
Maker Tyco Electronics
Total Page 2 Pages
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