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8N60 Key Features

  • RDS(ON) < 1.2Ω@VGS = 10 V
  • Ultra low gate charge ( typical 28 nC )
  • Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING

Other 8N60 Datasheets

Manufacturer Part Number Description
nELL Logo Nell Power Semiconductor 8N60 N-Channel Power MOSFET
CHONGQING PINGYANG
CHONGQING PINGYANG		 8N60 N-CHANNEL MOSFET
Inchange Logo Inchange Semiconductor 8N60 N-Channel MOSFET Transistor
UTC Logo Unisonic Technologies 8N60-CBQ N-CHANNEL MOSFET
UTC Logo Unisonic Technologies 8N60-MH N-CHANNEL POWER MOSFET

View all 8N60 datasheets →

8N60 Description

The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.