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MJE13009-Q - NPN SILICON TRANSISTOR

Description

The UTC MJE13009-Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.

It is particularly suited for 115 and 220 V switch mode applications.

Features

  • S.
  • VCEO(SUS) 400V.
  • 700V Blocking Capability.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD MJE13009-Q Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13009-Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications.  FEATURES * VCEO(SUS) 400V * 700V Blocking Capability  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13009L-Q-TA3-T MJE13009G-Q-TA3-T Note: Pin Assignment: E: Emitter C: Collector Package TO-220 B: Base Pin Assignment 123 BCE Packing Tube MJE13009L-Q-TA3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TA3: TO-220 (3) L: Lead Free, G: Halogen Free and Lead Free  MARKING www.unisonic.
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