Datasheet Summary
12.5-30 GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3688aQDG is a three-stage self-biased wide band monolithic Low Noise Amplifier monolithic circuit. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS pliant SMD package.
UUMSS AA3366868788AA YYYYWG
Main Features
- Broadband performances: 12.5-30GHz
- 2.1dB noise figure
- 26dB gain
- 26dBm Output IP3
- DC bias: Vd = 4V @ Id = 85 / 115mA
- 24L-QFN4x4
- MSL1
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency...