CHA3688aQDG
Description
The CHA3688a QDG is a three-stage self-biased wide band monolithic Low Noise Amplifier monolithic circuit. The circuit is manufactured with a p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in Ro HS pliant SMD package.
UUMSS AA3366868788AA YYYYWG
Main Features
- Broadband performances: 12.5-30GHz
- 2.1d B noise figure
- 26d B gain
- 26d Bm Output IP3
- DC bias: Vd = 4V @ Id = 85 / 115m A
- 24L-QFN4x4
- MSL1
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
OIP3 3rd order intercept point (16
- 30GHz)
Min Typ Max Unit
30 GHz
26 d B
2.5 d B
26 d Bm
Ref. : DSCHA3688a QDG0301
- 27 Oct 20
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille
- Parc Mosaic
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
- France Tel.: +33 (0) 1 69 86 32 00
-...
