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CHA3688aQDG

Manufacturer: United Monolithic Semiconductors
CHA3688aQDG datasheet preview

Datasheet Details

Part number CHA3688aQDG
Datasheet CHA3688aQDG-UnitedMonolithicSemiconductors.pdf
File Size 1.05 MB
Manufacturer United Monolithic Semiconductors
Description Low Noise Amplifier
CHA3688aQDG page 2 CHA3688aQDG page 3

CHA3688aQDG Overview

The CHA3688aQDG is a three-stage self-biased wide band monolithic Low Noise Amplifier monolithic circuit. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS pliant SMD package.

CHA3688aQDG Key Features

  • Broadband performances: 12.5-30GHz
  • 2.1dB noise figure
  • 26dB gain
  • 26dBm Output IP3
  • DC bias: Vd = 4V @ Id = 85 / 115mA
  • 24L-QFN4x4
  • 30GHz)
  • 27 Oct 20
  • Parc Mosaic
  • 10, Avenue du Québec
United Monolithic Semiconductors logo - Manufacturer

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CHA3688aQDG Distributor

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