CHA3688aQDG
Description
The CHA3688aQDG is a three-stage self-biased wide band monolithic Low Noise Amplifier monolithic circuit. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
Key Features
- Broadband performances: 12.5-30GHz
- 2.1dB noise figure
- 26dB gain
- 26dBm Output IP3
- DC bias: Vd = 4V @ Id = 85 / 115mA
- 24L-QFN4x4
- MSL1 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure OIP3 3rd order intercept point (16 - 30GHz) Min Typ Max Unit
- 5 30 GHz 21 26 dB
- 5 dB 24 26 dBm Ref. : DSCHA3688aQDG0301 - 27 Oct 20 1/18
