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CHA3688aQDG - Low Noise Amplifier

Description

The CHA3688aQDG is a three-stage self-biased wide band monolithic Low Noise Amplifier monolithic circuit.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Features

  • Broadband performances: 12.5-30GHz.
  • 2.1dB noise figure.
  • 26dB gain.
  • 26dBm Output IP3.
  • DC bias: Vd = 4V @ Id = 85 / 115mA.
  • 24L-QFN4x4.
  • MSL1 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure OIP3 3rd order intercept point (16 - 30GHz) Min Typ Max Unit 12.5 30 GHz 21 26 dB 2.1 2.5 dB 24 26 dBm Ref. : DSCHA3688aQDG0301 - 27 Oct 20 1/18 Specifications subject to change without no.

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Datasheet Details

Part number CHA3688aQDG
Manufacturer United Monolithic Semiconductors
File Size 1.05 MB
Description Low Noise Amplifier
Datasheet download datasheet CHA3688aQDG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA3688aQDG 12.5-30 GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3688aQDG is a three-stage self-biased wide band monolithic Low Noise Amplifier monolithic circuit. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UUMSS AA3366868788AA YYYYWWWWG Main Features ■ Broadband performances: 12.5-30GHz ■ 2.1dB noise figure ■ 26dB gain ■ 26dBm Output IP3 ■ DC bias: Vd = 4V @ Id = 85 / 115mA ■ 24L-QFN4x4 ■ MSL1 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure OIP3 3rd order intercept point (16 - 30GHz) Min Typ Max Unit 12.
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