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CHA3688aQDG Datasheet, United Monolithic Semiconductors

CHA3688aQDG Datasheet, United Monolithic Semiconductors

CHA3688aQDG

datasheet Download (Size : 1.05MB)

CHA3688aQDG Datasheet

CHA3688aQDG amplifier

low noise amplifier.

CHA3688aQDG

datasheet Download (Size : 1.05MB)

CHA3688aQDG Datasheet

CHA3688aQDG Features and benefits

CHA3688aQDG Features and benefits


* Broadband performances: 12.5-30GHz
* 2.1dB noise figure
* 26dB gain
* 26dBm Output IP3
* DC bias: Vd = 4V @ Id = 85 / 115mA
* 24L-QFN4x4
* M.

CHA3688aQDG Description

CHA3688aQDG Description

The CHA3688aQDG is a three-stage self-biased wide band monolithic Low Noise Amplifier monolithic circuit. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithog.

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TAGS

CHA3688aQDG
Low
Noise
Amplifier
United Monolithic Semiconductors

Manufacturer


United Monolithic Semiconductors

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