CHA3656-FAB Datasheet (United Monolithic Semiconductors)

CHA3656-FAB, Low Noise Amplifier

The CHA3656-FAB is a two-stage selfbiased wide band monolithic Low Noise Amplifier.

It is dedicated to space communications and also well suited for a wide range of applications, such as C, X, Ku radar, test instrumentation and hi-rel applications.

The circuit is manufactured with a pHEMT process, 0

CHA3656-FAB Features

* Broadband performances: 5.8-16GHz

* 14.5dBm power at 1dB gain compression

* 1.75dB Noise Figure

* 20dB Linear Gain

* DC bias: Vd1=Vd2=3.3V, Id=70mA

* 20 Leads-SMD

* 6x6mm² hermetic metal ceramic package Main Electrical Characteristics Tamb.= +25°C Symbol Parameter