CHA3656-FAB Datasheet, Amplifier, United Monolithic Semiconductors

CHA3656-FAB Features

• Amplifier
• Broadband performances: 5.8-16GHz
• 14.5dBm power at 1dB gain compression
• 1.75dB Noise Figure
• 20dB Linear Gain
• DC bias: Vd1=Vd2=3.3V, Id=

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Part number:

CHA3656-FAB

Manufacturer:

United Monolithic Semiconductors

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1.03MB

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📄 Datasheet

Description:

Low noise amplifier. The CHA3656-FAB is a two-stage selfbiased wide band monolithic Low Noise Amplifier. It is dedicated to space communications and also

CHA3656-FAB Application

• Applications such as C, X, Ku radar, test instrumentation and hi-rel applications. The circuit is manufactured with a pHEMT process, 0.25µm gate le

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CHA3656-FAB

United Monolithic Semiconductors

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