CHA3656-FAB Datasheet - United Monolithic Semiconductors

CHA3656-FAB Low Noise Amplifier

The CHA3656-FAB is a two-stage selfbiased wide band monolithic Low Noise Amplifier. It is dedicated to space communications and also well suited for a wide range of applications, such as C, X, Ku radar, test instrumentation and hi-rel applications. The circuit is manufactured with a pHEMT process, 0.

CHA3656-FAB Features

* Broadband performances: 5.8-16GHz

* 14.5dBm power at 1dB gain compression

* 1.75dB Noise Figure

* 20dB Linear Gain

* DC bias: Vd1=Vd2=3.3V, Id=70mA

* 20 Leads-SMD

* 6x6mm² hermetic metal ceramic package Main Electrical Characteristics Tamb.= +25°C Symbol Parameter

CHA3656-FAB-UnitedMonolithicSemiconductors.pdf

CHA3656-FAB Datasheet Preview — Preview of CHA3656-FAB PDF

Datasheet Details

Part number:

CHA3656-FAB

Manufacturer:

United Monolithic Semiconductors

File Size:

1.03 MB

Description:

Low noise amplifier.

CHA3656-FAB Distributor

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CHA3656-FAB CHA3656-FAB Low Noise Amplifier United Monolithic Semiconductors