CHA3656-FAB Low Noise Amplifier

United Monolithic Semiconductors

Description

CHA3656-FAB 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD Hermetic package .
The CHA3656-FAB is a two-stage selfbiased wide band monolithic Low Noise Amplifier.

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Datasheet Specifications

Part number: CHA3656-FAB
Manufacturer: United Monolithic Semiconductors
File Size: 1.03 MB
Datasheet: CHA3656-FAB-UnitedMonolithicSemiconductors.pdf
Description: Low Noise Amplifier

Features

* Broadband performances: 5.8-16GHz
* 14.5dBm power at 1dB gain compression
* 1.75dB Noise Figure
* 20dB Linear Gain
* DC bias: Vd1=Vd2=3.3V, Id=70mA
* 20 Leads-SMD
* 6x6mm² hermetic metal ceramic package Main Electrical Characteristics Tamb. = +25°C Symbol Parameter

CHA3656-FAB Distributors

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CHA3656-FAB Low Noise Amplifier United Monolithic Semiconductors

United Monolithic Semiconductors CHA3656-FAB-like datasheet