CHA3689-99F Datasheet - United Monolithic Semiconductors

CHA3689-99F Low Noise Amplifier

The CHA3689-99F is a three-stage self biased wide band monolithic low noise Vd1 Vd2 amplifier. RFin It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the.

CHA3689-99F Features

* Broadband performance: 12.5-30GHz

* 2.0dB noise figure

* 26dB gain (12.5-26GHz)

* 26dBm output IP3 (18-30GHz)

* Low DC power consumption

* DC bias: Vd=4 Volt @ Id= 90 /120mA

* Chip size : 2.45 x 1.21 x 0.1mm Gain NF On wafer typical measurements @ 120mA Main Charact

CHA3689-99F-UnitedMonolithicSemiconductors.pdf

CHA3689-99F Datasheet Preview — Preview of CHA3689-99F PDF

Datasheet Details

Part number:

CHA3689-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

865.72 KB

Description:

Low noise amplifier.

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CHA3689-99F CHA3689-99F Low Noise Amplifier United Monolithic Semiconductors

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