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CHA3688aQDG

Low Noise Amplifier

CHA3688aQDG Features

* Broadband performances: 12.5-30GHz

* 2.1dB noise figure

* 26dB gain

* 26dBm Output IP3

* DC bias: Vd = 4V @ Id = 85 / 115mA

* 24L-QFN4x4

* MSL1 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure OI

CHA3688aQDG General Description

The CHA3688aQDG is a three-stage self-biased wide band monolithic Low Noise Amplifier monolithic circuit. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD packag.

CHA3688aQDG Datasheet (1.05 MB)

Preview of CHA3688aQDG PDF

Datasheet Details

Part number:

CHA3688aQDG

Manufacturer:

United Monolithic Semiconductors

File Size:

1.05 MB

Description:

Low noise amplifier.

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TAGS

CHA3688aQDG Low Noise Amplifier United Monolithic Semiconductors

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