CHA3688aQDG Datasheet (United Monolithic Semiconductors)

CHA3688aQDG, Low Noise Amplifier

The CHA3688aQDG is a three-stage self-biased wide band monolithic Low Noise Amplifier monolithic circuit.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in RoHS compliant SMD packag

CHA3688aQDG Features

* Broadband performances: 12.5-30GHz

* 2.1dB noise figure

* 26dB gain

* 26dBm Output IP3

* DC bias: Vd = 4V @ Id = 85 / 115mA

* 24L-QFN4x4

* MSL1 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure OI