CHA3688aQDG Datasheet - United Monolithic Semiconductors

CHA3688aQDG Low Noise Amplifier

The CHA3688aQDG is a three-stage self-biased wide band monolithic Low Noise Amplifier monolithic circuit. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD packag.

CHA3688aQDG Features

* Broadband performances: 12.5-30GHz

* 2.1dB noise figure

* 26dB gain

* 26dBm Output IP3

* DC bias: Vd = 4V @ Id = 85 / 115mA

* 24L-QFN4x4

* MSL1 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure OI

CHA3688aQDG-UnitedMonolithicSemiconductors.pdf

CHA3688aQDG Datasheet Preview — Preview of CHA3688aQDG PDF

Datasheet Details

Part number:

CHA3688aQDG

Manufacturer:

United Monolithic Semiconductors

File Size:

1.05 MB

Description:

Low noise amplifier.

CHA3688aQDG Distributor

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CHA3688aQDG CHA3688aQDG Low Noise Amplifier United Monolithic Semiconductors