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CHA8100-99F Datasheet, United Monolithic Semiconductors

CHA8100-99F Datasheet, United Monolithic Semiconductors

CHA8100-99F

datasheet Download (Size : 409.43KB)

CHA8100-99F Datasheet

CHA8100-99F amplifier

x-band hbt high power amplifier.

CHA8100-99F

datasheet Download (Size : 409.43KB)

CHA8100-99F Datasheet

CHA8100-99F Features and benefits

CHA8100-99F Features and benefits


* 11W output power in pulse mode
* High gain: > 18dB @ 10GHz
* High PAE: 40% @ 10GHz
* Two biasing modes: - Digital control thanks to TTL interface - Anal.

CHA8100-99F Application

CHA8100-99F Application

The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Mor.

CHA8100-99F Description

CHA8100-99F Description

The CHA8100-99F chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includes:
* an an.

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CHA8100-99F Page 1 CHA8100-99F Page 2 CHA8100-99F Page 3

TAGS

CHA8100-99F
X-band
HBT
High
Power
Amplifier
United Monolithic Semiconductors

Manufacturer


United Monolithic Semiconductors

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