CHA8252-99F
CHA8252-99F is 10W K-Band High Power Amplifier manufactured by United Monolithic Semiconductors.
Description
The CHA8252-99F is a three-stage Ga N
High Power Amplifier in the frequency band
17.3-20.3GHz. This HPA typically provides
10W of output power associated to 35% of
Power Added Efficiency. The small signal gain exhibits more than 31d B. The overall power supply is 18V/0.3A (quiescent
STG1
STG2
STG3 current).
This circuit is a very versatile amplifier for high performance systems.
The circuit is dedicated to space applications and well suited for a wide range of microwave applications and systems.
The part is developed on a robust 0.15µm gate length Ga N on Si C HEMT process and is available as a bare die.
Main Features
- 17.3-20.3 GHz frequency range
- Linear Gain is 31d B
- 40.5d Bm Pout for +16d Bm input power
- Associated PAE is more than 35% for +16d Bm input power
- Associated Id is 1.8A for +16d Bm input power
- DC bias: Vd=18Volts @Idq=0.3A
- Chip size : 5x3.4x0.07mm
Pout @8 d B pression PAE @8 d B pression
Main Electrical Characteristics
Tb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
PAE Power Added Efficiency (Pin=16d Bm)
Pout Output Power (Pin=16d Bm)
Min Typ Max Unit
20.3 GHz
31 d B
%
40.5 d...
