Part CHA8252-99F
Description 10W K-Band High Power Amplifier
Manufacturer United Monolithic Semiconductors
Size 1.06 MB
United Monolithic Semiconductors
CHA8252-99F

Overview

The CHA8252-99F is a three-stage GaN VD High Power Amplifier in the frequency band 17.3-20.3GHz. This HPA typically provides 10W of output power associated to 35% of Power Added Efficiency.

  • 17.3-20.3 GHz frequency range
  • Linear Gain is 31dB
  • 40.5dBm Pout for +16dBm input power
  • Associated PAE is more than 35% for +16dBm input power
  • Associated Id is 1.8A for +16dBm input power
  • DC bias: Vd=18Volts @Idq=0.3A
  • Chip size : 5x3.4x0.07mm Pout @8 dB compression PAE @8 dB compression Main Electrical Characteristics Tb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain PAE Power Added Efficiency (Pin=16dBm) Pout Output Power (Pin=16dBm) Min Typ Max Unit
  • 3 GHz 31 dB 35 %
  • 5 dBm Ref. : DSCHA82521355 - 21 Dec 21 1/18