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CHA8252-99F
10W K-Band High Power Amplifier
GaN Monolithic Microwave IC
Description
The CHA8252-99F is a three-stage GaN
VD
High Power Amplifier in the frequency band
17.3-20.3GHz. This HPA typically provides
10W of output power associated to 35% of
Power Added Efficiency. The small signal
gain exhibits more than 31dB. The overall
power supply is 18V/0.3A (quiescent
STG1
STG2
STG3
current).
IN
OUT
This circuit is a very versatile amplifier for
high performance systems.
The circuit is dedicated to space applications
and well suited for a wide range of
microwave applications and systems.
VG
The part is developed on a robust 0.15µm
gate length GaN on SiC HEMT process and
is available as a bare die.
Main Features
■ 17.3-20.
CHA8252-99F Datasheet
