CHA8252-99F Datasheet 10w K-band High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA8252-99F 10W K-Band High Power Amplifier GaN Monolithic Microwave.

Datasheet Details

Part number	CHA8252-99F
Manufacturer	United Monolithic Semiconductors
File Size	1.06 MB
Description	10W K-Band High Power Amplifier
Datasheet	CHA8252-99F-UnitedMonolithicSemiconductors.pdf

The CHA8252-99F is a three-stage GaN VD High Power Amplifier in the frequency band 17.3-20.3GHz.

This HPA typically provides 10W of output power associated to 35% of Power Added Efficiency.

The small signal gain exhibits more than 31dB.

17.3-20.3 GHz frequency range.
Linear Gain is 31dB.
40.5dBm Pout for +16dBm input power.
Associated PAE is more than 35% for +16dBm input power.
Associated Id is 1.8A for +16dBm input power.
DC bias: Vd=18Volts @Idq=0.3A.
Chip size : 5x3.4x0.07mm Pout @8 dB compression PAE @8 dB compression Main Electrical Characteristics Tb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain PAE Power Added Efficiency (Pin=16dBm) Pout Output Power (Pin=16d.

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