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CHA8352-99F Datasheet, United Monolithic Semiconductors

CHA8352-99F Datasheet, United Monolithic Semiconductors

CHA8352-99F

datasheet Download (Size : 1.75MB)

CHA8352-99F Datasheet

CHA8352-99F amplifier

20w ku-band high power amplifier.

CHA8352-99F

datasheet Download (Size : 1.75MB)

CHA8352-99F Datasheet

CHA8352-99F Features and benefits

CHA8352-99F Features and benefits


* 10.7-12.75 GHz frequency range
* Linear Gain is 25 dB
* 43dBm Pout for +23dBm input power
* Associated PAE is more than 45% for +23dBm input power
*.

CHA8352-99F Application

CHA8352-99F Application

and well suited for a wide range of microwave applications and systems. The part is developed on a robust 0.15µm gat.

CHA8352-99F Description

CHA8352-99F Description

The CHA8352-99F is a two-stage GaN High V+ Power Amplifier in the frequency band 10.7- 12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The small signal gain exhibits more than 25dB. The ov.

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TAGS

CHA8352-99F
20W
Ku-Band
High
Power
Amplifier
United Monolithic Semiconductors

Manufacturer


United Monolithic Semiconductors

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