18w x-band high power amplifier.
* Frequency range: 8.5-11GHz
* High output power: 18W
* High PAE: 43%
* Linear Gain: 24dB
* DC bias: Vd=25Volt @ Idq=0.8A
* Chip size 4.36x2.57x0..
from military to commercial
communication systems.
The circuit is manufactured with a GaN
HEMT process, 0.25µm gate .
V+
The CHA8611-99F is a two stage High
Power Amplifier operating between 8.5 and
11GHz and providing typically 18W of
saturated output power and 43% of power
added efficiency.
In
Out
It is designed for a wide range of
STG1 STG2
application.
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