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CHA8710-QDB Datasheet, United Monolithic Semiconductors

CHA8710-QDB Datasheet, United Monolithic Semiconductors

CHA8710-QDB

datasheet Download (Size : 1.21MB)

CHA8710-QDB Datasheet

CHA8710-QDB amplifier equivalent, 25w x-band high power amplifier.

CHA8710-QDB

datasheet Download (Size : 1.21MB)

CHA8710-QDB Datasheet

Features and benefits


* Frequency range: 8.5-10.5GHz
* High output power: 25W
* High PAE: 41%
* Linear Gain: 29.5dB
* DC bias: Vd=30Volt @ Idq=0.75A
* 46 Leads QFN 7x7 .

Application

from defense to commercial communication and radar systems. The circuit is manufactured with a robust GaN HEMT process,.

Description

The CHA8710-QDB is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 41% of power added efficiency. It is designed for a wide range of applications, from defense to commercial.

Image gallery

CHA8710-QDB Page 1 CHA8710-QDB Page 2 CHA8710-QDB Page 3

TAGS

CHA8710-QDB
25W
X-Band
High
Power
Amplifier
United Monolithic Semiconductors

Manufacturer


United Monolithic Semiconductors

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