25w x-band high power amplifier.
* Frequency range: 8.5-10.5GHz
* High output power: 25W
* High PAE: 44%
* Linear Gain: 28.5dB
* DC bias: Vd=25Volt @ Idq=0.75A
* Chip size 5.1x4..
from military to commercial
communication systems.
The circuit is manufactured with a GaN
HEMT process, 0.25µm gate .
V+
The CHA8710a99F is a two stage High
Power Amplifier operating between 8.5 and
10.5GHz and providing typically 25W of
saturated output power and 44% of power
added efficiency.
In
Out
It is designed for a wide range of
STG1 STG2
applicati.
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