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UF3SC065040D8S Datasheet Preview

UF3SC065040D8S Datasheet

MOSFET

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650V-45mW SiC FET
DATASHEET
UF3SC065040D8S
D
(TAB)
Rev. B, January 2020
Description
This SiC FET device is based on a unique ‘cascode’ circuit
configuration, in which a normally-on SiC JFET is co-packaged with a Si
MOSFET to produce a normally-off SiC FET device. The device’s
standard gate-drive characteristics allows for a true “drop-in
replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction
devices. Available in the DFN8X8-4L package, this device exhibits
ultra-low gate charge and exceptional reverse recovery
characteristics, making it ideal for switching inductive loads , and any
application requiring standard gate drive.
Features
1
G (1)
4 32 1 KS (2)
S (3,4)
w Typical on-resistance RDS(on),typ of 45mW
w Maximum operating temperature of 150°C
w Excellent reverse recovery
w Low gate charge
w Low intrinsic capacitance
w ESD protected, HBM class 2
w DFN8X8-4L package for faster switching, clean gate waveforms
Typical applications
Part Number
UF3SC065040D8S
Package
DFN8X8-4L
Marking
UF3SC065040D8S
w EV charging
w PV inverters
w Switch mode power supplies
w Power factor correction modules
w Motor drives
w Induction heating
Datasheet: UF3SC065040D8S
Rev. B, January 2020
1




UnitedSiC

UF3SC065040D8S Datasheet Preview

UF3SC065040D8S Datasheet

MOSFET

No Preview Available !

Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 1
Pulsed drain current 2
Single pulsed avalanche energy 3
Power dissipation
Maximum junction temperature
Operating and storage temperature
Reflow soldering temperature
1. Limited by bondwires
2. Pulse width tp limited by TJ,max
3. Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS
Ptot
TJ,max
TJ, TSTG
Tsolder
Test Conditions
DC
TC < 120°C
TC = 25°C
L=15mH, IAS =3.19A
TC = 25°C
reflow MSL 3
Value
650
-25 to +25
18
110
76
125
150
-55 to 150
260
Units
V
V
A
A
mJ
W
°C
°C
°C
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Symbol
RqJC
Test Conditions
Value
Units
Min Typ Max
0.8 1 °C/W
Datasheet: UF3SC065040D8S
Rev. B, January 2020
2


Part Number UF3SC065040D8S
Description MOSFET
Maker UnitedSiC
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