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Vishay Intertechnology Electronic Components Datasheet

SIZ914DT Datasheet

Dual N-Channel 30V (D-S) MOSFET

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SiZ914DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V) RDS(on) () (Max.)
0.00640 at VGS = 10 V
30
0.01000 at VGS = 4.5 V
30 0.00137 at VGS = 10 V
0.00194 at VGS = 4.5 V
ID (A)g Qg (Typ.)
16a
7.2 nC
16a
40a
30.1 nC
40a
PowerPAIR® 6 x 5
Pin 1
1
G2
8
7
S1/D2
Pin 9
S2
6
5
G1
D1
2
D1 3
5 mm
D1
D1
4
6 mm
Ordering Information:
SiZ914DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Gen IV Power MOSFETs
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
D1
• CPU Core Power
• Computer/Server Peripherals
• Synchronous Buck Converter G1
• POL
• Telecom DC/DC
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 µs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
+ 20, - 16
16a 40a
16a 40a
16a, b, c
40a, b, c
15.5b, c
38.8b, c
80 100
19
3.25b, c
28
4.3b, c
10 20
5 20
22.7 100
14.5
3.9b, c
2.5b, c
64
5.2b, c
3.3b, c
- 55 to 150
260
S1/D2
Schottky
Diode
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
25 32 19 24
4.4 5.5
1 1.25
°C/W
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.
g. TC = 25 °C.
Document Number: 62905
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-2181-Rev. A, 14-Oct-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SIZ914DT Datasheet

Dual N-Channel 30V (D-S) MOSFET

No Preview Available !

SiZ914DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = 250 µA
Gate Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V, - 16 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 19 A
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 15 A
VGS = 4.5 V, ID = 20 A
VDS = 10 V, ID = 19 A
VDS = 10 V, ID = 20 A
Input Capacitance
Output Capacitance
Ciss
Coss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss/Ciss Ratio
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Crss Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 20 A
Qg VDS = 15 V, VGS = 10 V, ID = 20 A
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 20 A
Qgs
Channel-2
Qgd VDS = 15 V, VGS = 4.5 V, ID = 20 A
Output Charge
Qoss
VDS = 15 V, VGS = 0 V
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
f = 1 MHz
Min. Typ. Max. Unit
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
V
30
1.2 2.4
V
1 2.4
± 100
± 100
nA
1
60 240 µA
5
0.5 5 mA
20
A
25
0.00530 0.00640
0.00114 0.00137
0.00800 0.01000
0.00155 0.00194
55
S
68
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.5
0.2
1208
5603
375
2202
30
168
0.025
0.032
17
66
7.2
30.1
3.6
10.9
0.94
3.8
10
60
2.5
1
0.050
0.064
26
99
11
45.2
5
2
pF
nC
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62905
2 S13-2181-Rev. A, 14-Oct-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SIZ914DT
Description Dual N-Channel 30V (D-S) MOSFET
Maker Vishay
Total Page 14 Pages
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