SiHFB9N65A Description
IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 48 12 19 Single.
SiHFB9N65A Key Features
- Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness
- Improved Gate, Avalanche and Dynamic dV/dt RoHS
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Lead (Pb)-free Available