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Vishay Intertechnology Electronic Components Datasheet

SiHFB9N65A Datasheet

Power MOSFET

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IRFB9N65A, SiHFB9N65A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
48
12
19
Single
www.DataSheet4U.com
D
0.93
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback
• Single Transistor Forward
TO-220
IRFB9N65APbF
SiHFB9N65A-E3
IRFB9N65A
SiHFB9N65A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
TC = 25 °C
VGS at 10 V
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 5.2 A (see fig. 12).
c. ISD 5.2 A, dI/dt 90 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91104
S-81243-Rev. B, 21-Jul-08
LIMIT
650
± 30
8.5
5.4
21
1.3
325
5.2
16
167
2.8
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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1


Vishay Intertechnology Electronic Components Datasheet

SiHFB9N65A Datasheet

Power MOSFET

No Preview Available !

IRFB9N65A, SiHFB9N65A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
0.75
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
www.DataSheetD4rUa.icno-Smource Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 650 V, VGS = 0 V
VDS = 520 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 5.1 Ab
VDS = 50 V, ID = 3.1 A
650 -
-V
- 670 - mV/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
µA
- - 250
- - 0.93 Ω
3.9 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Ciss
Coss
Crss
Coss
Coss eff.
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 520 V, f = 1.0 MHz
VDS = 0 V to 520 Vc
-
-
-
-
-
-
1417
177
7.0
1912
48
84
-
-
-
-
-
-
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - - 48
Qgs
VGS = 10 V
ID = 5.2 A, VDS = 400 V
see fig. 6 and 13b
-
- 12 nC
Qgd - - 19
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
VDD = 325 V, ID = 5.2 A
RG = 9.1 Ω,RD = 62 Ω,
see fig. 10b
- 14 -
- 20 -
ns
- 34 -
- 18 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - 5.2
A
- - 21
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 5.2 A, VGS = 0 Vb
- - 1.5 V
trr
- 493 739 ns
TJ = 25 °C, IF = 5.2 A, dI/dt = 100 A/µsb
Qrr - 2.1 3.2 µC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses SiHFIB5N65A data and test conditions.
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2
Document Number: 91104
S-81243-Rev. B, 21-Jul-08


Part Number SiHFB9N65A
Description Power MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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