MMBT5551LT1 Overview
RoHS MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o) .,LTDCollector-Emiller Voltage:VCEO=160V SOT-23 1 1. Pulse Width 300uS Duty cycle 2% DEVICE MARKING: 2N5551S=Z1 WEJ ELECTRONIC CO.


