WNM6001 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package SOT-23
- Part: WNM6001
- Manufacturer: Will Semiconductor
- Size: 1.28 MB
Related Will Semiconductor Datasheets
| Part Number | Description |
|---|---|
| WNM07N60 | N-Channel MOSFET |
| WNM07N60F | N-Channel MOSFET |
| WNM07N65 | N-Channel MOSFET |
| WNM07N65F | N-Channel MOSFET |
| WNM12N65 | N-Channel MOSFET |
WNM6001 Description
WNM6001 Single N-Channel, 60V, 0.50A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNM6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit.
WNM6001 Applications
- Driver for Relay, Solenoid, Motor, LED etc