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WNM6001 Datasheet N-Channel MOSFET

Manufacturer: Will Semiconductor

Datasheet Details

Part number WNM6001
Manufacturer Will Semiconductor
File Size 1.28 MB
Description N-Channel MOSFET
Download WNM6001 Download (PDF)

General Description

s The WNM6001 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Overview

WNM6001 Single N-Channel, 60V, 0.50A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package SOT-23.