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WFF8N65B - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topo

Features

  • 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 25nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage (VISO=4000V AC).
  • Maximum Junction Temperature Range(150℃) WFF8N65B Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFF8N65B
Manufacturer Winsemi
File Size 701.94 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFF8N65B Datasheet

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Full PDF Text Transcription

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Features � 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) WFF8N65B Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
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