WFF8N65B Overview
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction....
WFF8N65B Key Features
- 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V
- Ultra-low Gate charge(Typical 25nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Isolation Voltage (VISO=4000V AC)
- Maximum Junction Temperature Range(150℃)