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WFP3205T - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe,DMOS technology.

Features

  • 109A,60V, RDS(on)(Max 8mΩ)@VGS=10V.
  • Ultra-low Gate charge(Typical 50nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFP3205T
Manufacturer Winsemi
File Size 1.12 MB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP3205T Datasheet

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Full PDF Text Transcription

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFP3205T Silicon N-Channel MOSFET Features ■ 109A,60V, RDS(on)(Max 8mΩ)@VGS=10V ■ Ultra-low Gate charge(Typical 50nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche characteristics.This Power MOSFET is well suited for synchronous DC-DC Converters and power Management inportable and battery operated products.
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