Datasheet Summary
Datasheet pdf
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Silicon N-Channel MOSFET
Features
- 109A,60V, RDS(on)(Max 8mΩ)@VGS=10V
- Ultra-low Gate charge(Typical 50nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche characteristics.This Power MOSFET is well suited for synchronous DC-DC Converters and power Management inportable and battery operated products.
Absolu...