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WFP12N60

Silicon N-Channel MOSFET

WFP12N60 Features

* 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V

* Ultra-low Gate Charge(Typical 43nC)

* Fast Switching Capability

* 100%Avalanche Tested

* Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology.

WFP12N60 General Description

This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supp.

WFP12N60 Datasheet (645.98 KB)

Preview of WFP12N60 PDF

Datasheet Details

Part number:

WFP12N60

Manufacturer:

WINSEMI SEMICONDUCTOR

File Size:

645.98 KB

Description:

Silicon n-channel mosfet.

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WFP12N60 Silicon N-Channel MOSFET WINSEMI SEMICONDUCTOR

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