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WFP18N20

Silicon N-Channel MOSFET

WFP18N20 Features

* 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V Ultra-low Gate Charge(Typical 40nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced been planar stripe,DMOS technology

WFP18N20 General Description

This Power MOSFET is produced using Winsemi's advanced been planar stripe,DMOS technology. This latest technology has especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automot.

WFP18N20 Datasheet (666.52 KB)

Preview of WFP18N20 PDF

Datasheet Details

Part number:

WFP18N20

Manufacturer:

WINSEMI SEMICONDUCTOR

File Size:

666.52 KB

Description:

Silicon n-channel mosfet.

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WFP18N20 Silicon N-Channel MOSFET WINSEMI SEMICONDUCTOR

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